| Autor: |
Bekman, H. H. P. Th., Gregorkiewicz, T., van Wezep, D. A., Ammerlaan, C. A. J. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 12/1/1987, Vol. 62 Issue 11, p4404, 2p, 2 Graphs |
| Abstrakt: |
Focuses on a study which examined the donor formation in heat-treated phosphorus-doped Czochralski-grown silicon by electron paramagnetic resonance and resistivity measurements. Proposal for oxygen clusters in thermal donors; Function of annealing time; Kind of transformation that the Si-NL10 spectrum undergoes. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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