Phosphorus diffusion into silicon from a spin-on source using rapid thermal processing.

Autor:	Hartiti, B., Slaoui, A., Muller, J. C., Stuck, R., Siffert, P.
Předmět:	SEMICONDUCTOR diffusion PHOSPHORUS RAPID thermal processing SILICON DIFFUSION
Zdroj:	Journal of Applied Physics; 6/1/1992, Vol. 71 Issue 11, p5474, 5p, 1 Chart, 5 Graphs
Abstrakt:	Presents a study which described the diffusion of phosphorus into silicon semiconductor from a doped spin-on source with the use of rapid thermal rapid processing. Characterization of the resulting diffused samples; Experimental procedures; Results and discussion.
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu