Autor:	Hahn, S., Ponce, F. A., Tiller, W. A., Stojanoff, V., Bulla, D. A. P., Castro, W. E.
Předmět:	BORON SEMICONDUCTOR doping PRECIPITATION (Chemistry) SILICON OXYGEN
Zdroj:	Journal of Applied Physics; 11/1/1988, Vol. 64 Issue 9, p4454, 12p, 3 Black and White Photographs, 3 Charts, 4 Graphs
Abstrakt:	Studies the effect of heavy boron doping upon oxygen precipitation in Czochralski silicon. Information on the x-ray theoretical considerations; Details on the experiment; Bragg line profiles; Conclusions.
Databáze:	Complementary Index
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