| Autor: |
Fujimura, Norifumi, Kurosaki, Hideki, Ito, Taichiro, Nakayama, Yutaka |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 11/1/1988, Vol. 64 Issue 9, p4499, 4p, 4 Black and White Photographs, 1 Diagram, 1 Graph |
| Abstrakt: |
Presents a study that examined the reaction between aluminum thin films and silicon substrate using transmission and scanning electron microscopy. Methodology; Relation between the length of sides and depth of the triangular pits of the samples; Features of the reaction at the interface. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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