Heavily Si-doped GaAs grown by metalorganic chemical vapor deposition.
| Autor: | Furuhata, Naoki, Kakimoto, Koichi, Yoshida, Masaji, Kamejima, Taibun |
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| Zdroj: | Journal of Applied Physics; 11/1/1988, Vol. 64 Issue 9, p4692, 4p, 5 Graphs |
| Abstrakt: | Presents a study that examined the doping mechanism for disilane and the compensation mechanism in heavily silicon-doped gallium arsenide. Methodology; Analysis of the electrical properties of the samples; Evaluation of the structural properties of the samples. |
| Databáze: | Complementary Index |
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