| Autor: |
Meyyappan, M., Kreskovsky, J. P., Grubin, H. L. |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 11/1/1988, Vol. 64 Issue 9, p4733, 18p, 5 Diagrams, 1 Chart, 17 Graphs |
| Abstrakt: |
Presents a study that examined the characteristics of gallium arsenide permeable transistor using numerical simulation. Analysis of the constant field scaling and depletion layer scaling in the transistor; Effect of channel material variation on the transistor; Influence of a semi-insulating region around the gate on the transistor. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
