| Autor: |
Cristoloveanu, S., Gardner, S., Jaussaud, C., Margail, J., Auberton-Hervé, A. J., Bruel, M. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 10/1/1987, Vol. 62 Issue 7, p2793, 6p, 6 Graphs |
| Abstrakt: |
Presents a study that examined the electrical structure properties of structure fabricated on silicon-on-insulator material formed by deep oxygenation implantation. Background on carrier-transport properties; Analysis of oxygen-related donors; Investigation of interface properties. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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