| Autor: |
Haegel, N. M., Winnacker, A., Leo, K., Rühle, W. W., Gisdakis, S. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 10/1/1987, Vol. 62 Issue 7, p2946, 4p, 4 Graphs |
| Abstrakt: |
Presents a study that measured the free-carrier lifetime and deep-level photoluminescence spectra in semi-insulating gallium arsenide semiconductors (GaAs). Background on the annealing of bulk semi-insulating GaAs; Analysis of the correlation between lifetime increases and decreases in midgap defects; Results and implications. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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