On the origin of misfit dislocations in InGaAs/GaAs strained layers.
| Autor: | Dixon, R. H., Goodhew, P. J. |
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| Zdroj: | Journal of Applied Physics; 10/1/1990, Vol. 68 Issue 7, p3163, 6p |
| Abstrakt: | Presents a study which examined the In[subx]Ga[sub1-x]As/GaAs (x<0.25) strained layers grown by molecular-beam epitaxy using plan-view transmission electron microscopy. Details on the experiment; Results and discussion; Conclusion. |
| Databáze: | Complementary Index |
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