In situ measurements of hydrogen motion and bonding in silicon.
| Autor: | Seager, C. H., Anderson, R. A., Brice, D. K. |
|---|---|
| Předmět: | |
| Zdroj: | Journal of Applied Physics; 10/1/1990, Vol. 68 Issue 7, p3268, 17p |
| Abstrakt: | Presents a study on the hydrogenation of both n- and p-type metal/thin oxide/silicon diodes using high frequency capacitance profiling. Implantation of low energy hydrogen; Sample preparation of silicon diodes; Electrical measurement techniques. |
| Databáze: | Complementary Index |
| Externí odkaz: |
|