Charge-quantization effects on current-voltage characteristics of AlGaAs/GaAs resonant tunneling diodes with spacer layers.

Autor: Koenig, E. T., Jogai, B., Paulus, M. J., Huang, C. I., Bozada, C. A.
Předmět:
Zdroj: Journal of Applied Physics; 10/1/1990, Vol. 68 Issue 7, p3425, 6p
Abstrakt: Presents an experimental data in support of a transport process in resonant tunneling diodes (RTD) with spacer layers. Procedure; Structure of the devices investigated in the study.
Databáze: Complementary Index