| Autor: |
Dagata, J. A., Tseng, W., Bennett, J., Schneir, J., Harary, H. H. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 10/1/1991, Vol. 70 Issue 7, p3661, 5p |
| Abstrakt: |
Presents a study which demonstrated nanometer-scale pattern generation on III-V semiconductor substrates using a scanning tunneling microscope (STM) operating in air. Significance of STM pattern generation of nanometer-scale oxide masks for use in the fabrication of low-dimensional heterostructures; Pattern transfer by wet chemical etching of the substrate and by selective-area heteroepitaxial growth of gallium arsenide on silicon; Basis for the improved surface stability. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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