Free-carrier plasma and optical amplification in undoped and modulation-doped Ga0.47In0.53As/Al0.48In0.52As multiple-quantum-well structures.

Autor: Moro, C., Ferrara, M., Cingolani, R., Zhang, Y. H., Ploog, K.
Předmět:
Zdroj: Journal of Applied Physics; 10/1/1991, Vol. 70 Issue 7, p3821, 8p, 1 Chart, 9 Graphs
Abstrakt: Presents the results of a study which investigated the radiative recombination processes of the free-carrier plasma confined in Ga[0.47]In[0.53]As/Al[sub0.48]In[sub0.52]As multiple-quantum well structures on indium phosphide substrate. Adaptation of space-resolved luminescence; Theoretical analysis of the optical gain spectra; Discussion on the low-excitation-intensity experiments.
Databáze: Complementary Index