Time dependence of radiation-induced interface trap formation in metal-oxide-semiconductor devices as a function of oxide thickness and applied field.
| Autor: | Brown, D. B., Saks, N. S. |
|---|---|
| Předmět: | |
| Zdroj: | Journal of Applied Physics; 10/1/1991, Vol. 70 Issue 7, p3734, 14p, 14 Graphs, 30 Cartoon or Caricatures |
| Abstrakt: | Studies the formation mechanisms of interface traps (N[subit]) in metal-oxide-semiconductor (MOS) devices. Time-dependence of the N[subit] formation; Description of N[subit]; Degraded characteristics of the electrical properties of the MOS device. |
| Databáze: | Complementary Index |
| Externí odkaz: |
|