| Autor: |
Fujita, Shizuo, Toyoshima, Hideo, Sasaki, Akio |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 10/1/1988, Vol. 64 Issue 7, p3481, 6p, 4 Diagrams, 4 Charts, 4 Graphs |
| Abstrakt: |
Discusses a study which investigated bonding configuration of constituent elements in fluorinated silicon nitride insulating films prepared by reactive plasma of SiF[sub4] (or SiF[sub2]), N[sub2] and H[sub2] gas mixture. Way in which the mixture was investigated; Result of the complemental increase of fluorine with decrease of nitrogen and the passivation of silicon dangling bonds by fluorine atoms; Aspects that interest plasma-deposited silicon nitride insulating films. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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