| Autor: |
Humphreys, T. P., Hamaguchi, N., Bedair, S. M., Tarn, J. C. L., El-Masry, N., Radzimski, Z. J. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 10/1/1988, Vol. 64 Issue 7, p3763, 3p, 7 Black and White Photographs |
| Abstrakt: |
Discusses a study that dealt with the use of electron-beam-induced current imaging and transmission electron microscopy techniques to examine defects in heteroepitaxial films of gallium arsenide (GaAs) on silicon. Success in the use of the electron-beam-induced current method; Role of the electrically active defects in determining minority carrier lifetimes and diffusion lengths; Limitation in the application of GaAs on silicon technology. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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