| Autor: |
Silver, R. M., Dagata, J. A., Tseng, W. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 11/1/1994, Vol. 76 Issue 9, p5122, 10p, 1 Chart, 4 Graphs |
| Abstrakt: |
Focuses on the tunneling spectroscopy of sulfur- and oxygen-terminated n- and p-type gallium arsenide (GaAs) (110) surfaces for air and ultrahigh-vacuum conditions. Comparison between tip-induced and surface-state-induced band-bending effects in the tunneling spectra of passivated semiconductor surfaces; Advantages of molecular-beam-epitaxial-grown test structures over silicon; Role of surface states; Experimental procedures for GaAs passivation. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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