| Autor: |
Duddles, N. J., Dhese, K. A., Devine, P., Ashenford, D. E., Scott, C. G., Nicholls, J. E., Lunn, B. |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 11/1/1994, Vol. 76 Issue 9, p5214, 4p, 2 Graphs |
| Abstrakt: |
Examines the control of nitrogen incorporation in ZnTe:N grown by molecular-beam epitaxy using argon dilution in a nitrogen plasma source. Trends in p-type conductivity; Description of the ZnTe layers; Relationship of the luminescence trends and the corresponding net hole concentrations as determined from C-V measurements. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
