Electrical characterization of a GaAs quantum well confined by GaAlAs layers or by two superlattices.
| Autor: | Ababou, S., Guillot, G., Regreny, A. |
|---|---|
| Předmět: | |
| Zdroj: | Journal of Applied Physics; 11/1/1992, Vol. 72 Issue 9, p4134, 5p, 6 Graphs |
| Abstrakt: | Presents a study which electrically characterized a gallium arsenide quantum well confined by GaAlAs layers or by two superlattices. Experimental details; Results and discussion; Conclusion. |
| Databáze: | Complementary Index |
| Externí odkaz: |
|