Photoluminescence spectra in an applied magnetic field for excitons bound to ionized donors in high-purity, epitaxial GaAs.
| Autor: | Zemon, S., Lambert, G. |
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| Zdroj: | Journal of Applied Physics; 11/1/1991, Vol. 70 Issue 9, p4909, 10p |
| Abstrakt: | Examines the magnetic-field dependence of the photoluminescence spectra of ionized donor-bound excitons for high-purity gallium arsenide (GaAs) grown by organometallic vapor phase epitaxy. Preparation of the GaAs samples; Results and discussion. |
| Databáze: | Complementary Index |
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