Electrical and thermoelectrical properties of Zn3P2 films grown by the hot wall epitaxy technique.

Autor: Babu, V. Suresh, Vaya, P. R., Sobhanadri, J.
Předmět:
Zdroj: Journal of Applied Physics; 8/15/1988, Vol. 64 Issue 4, p1922, 5p, 1 Chart, 6 Graphs
Abstrakt: Presents information on a study which discussed zinc phosphide thin films prepared by the hot wall epitaxy technique. Use of thin films on mica substrates for thermoelectric measurements; Utilization of the hot wall epitaxy technique; Results of Hall mobility.
Databáze: Complementary Index