Study of reactive-ion-etch-induced lattice damage in silicon by Ar, CF4, NF3, and CHF3 plasmas.
| Autor: | Connick, I-Wen H., Bhattacharyya, Anjan, Ritz, Kenneth N., Smith, W. Lee |
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| Zdroj: | Journal of Applied Physics; 8/15/1988, Vol. 64 Issue 4, p2059, 5p |
| Abstrakt: | Presents information on a study which investigated reactive-ion-etch-induced damage in silicon. Preparation of wafers for oxide leakage current measurements; Results of transmission electron microscopy; Thermal wave results. |
| Databáze: | Complementary Index |
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