| Autor: |
Ishida, M., Tanaka, H., Sawada, K., Namiki, A., Nakamura, T., Ohtake, N. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 8/15/1988, Vol. 64 Issue 4, p2087, 5p, 1 Chart, 1 Graph |
| Abstrakt: |
Presents information on a study which investigated silicon (Si) monolayer deposition on sapphire substrates by in situ x-ray photoelectron spectroscopy (XPS). Information on the XPS analysis of Si monolayer deposited on sapphire; Growth mechanisms for noninterdiffusing systems; Description of the epitaxial growth of Si on sapphire surface predeposited by photolysis of Si[sub2]H[sub6]. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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