| Autor: |
Gildenblat, G. Sh., Huang, C.-L., Grot, S. A. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 8/15/1988, Vol. 64 Issue 4, p2150, 3p |
| Abstrakt: |
Presents information on a study which discussed the control of temperature dependence of electron trapping in metal-oxide-semiconductor (MOS) devices, by the injection mode. Description of the temperature dependence of electron trapping in MOS devices; Information on the breakdown model to relate the temperature dependencies of electron trapping and MOS breakdown; Typical activation energies. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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