| Autor: |
Gray, M. L., Parsey, J. M., Ahrens, R. E., Pearton, S. J., Short, K. T., Sargent, L., Blakemore, J. S. |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 11/1/1989, Vol. 66 Issue 9, p4176, 5p |
| Abstrakt: |
Evaluates the quality of the n-type layers that were produced through the implantations of silicon and silicon fluoride ions into semi-insulating gallium arsenide (GaAs) wafers. Effect of transient annealing of shallow silicon implantations on axial and lateral diffusion; Application of a scanning electron microscope with cathodoluminescence capability; Free carrier distribution obtained for GaAs wafers subjected to furnace or rapid thermal annealing cycles for implant activation. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
