| Autor: |
Kikuchi, Akihiko, Kishino, Katsumi, Kaneko, Yawara |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 11/1/1989, Vol. 66 Issue 9, p4557, 3p |
| Abstrakt: |
Presents a study that obtained a device-quality GaInP epitaxial layer lattice matched to (100)-gallium arsenide substrates by gas-source molecular-beam epitaxy. Method used to evaluate the optical quality of the GaInP layers fabricated; Evaluation of electrical properties for the GaInP layers; Characteristic temperature of the threshold current of a laser on heat-sink temperature. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
