| Autor: |
Hallén, A., Fenyö, D., Sundqvist, B. U. R., Johnson, R. E., Svensson, B. G. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 9/15/1991, Vol. 70 Issue 6, p3025, 6p, 1 Diagram, 1 Chart, 6 Graphs |
| Abstrakt: |
Reports on the influence of ion flux on defect production in MeV proton-irradiated silicon. Production of stable vacancy-related point defects in proton-irradiated silicon; Computer simulations of the defect generation kinetics; Preparation of samples used in the experiments. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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