Autor: |
Bulle-Lieuwma, C. W. T., Van Ommen, A. H., Vandenhoudt, D. E. W., Ottenheim, J. J. M., de Jong, A. F. |
Předmět: |
|
Zdroj: |
Journal of Applied Physics; 9/15/1991, Vol. 70 Issue 6, p3093, 16p, 20 Black and White Photographs, 11 Diagrams, 1 Chart, 3 Graphs |
Abstrakt: |
Reports on the microstructure of buried cobalt disilicide CoSi[sub2] layers formed by high-dose cobalt implantation into (100) and (111) silicon (Si) substrates. Synthesis of Si/CoSi[sub2]/Si structures; Difference in thermal expansion between CoSi[sub2] and silicon; Significance of the Si/CoSi[sub2] system. |
Databáze: |
Complementary Index |
Externí odkaz: |
|