Microstructure of buried CoSi2 layers formed by high-dose Co implantation into (100) and (111) Si substrates.

Autor: Bulle-Lieuwma, C. W. T., Van Ommen, A. H., Vandenhoudt, D. E. W., Ottenheim, J. J. M., de Jong, A. F.
Předmět:
Zdroj: Journal of Applied Physics; 9/15/1991, Vol. 70 Issue 6, p3093, 16p, 20 Black and White Photographs, 11 Diagrams, 1 Chart, 3 Graphs
Abstrakt: Reports on the microstructure of buried cobalt disilicide CoSi[sub2] layers formed by high-dose cobalt implantation into (100) and (111) silicon (Si) substrates. Synthesis of Si/CoSi[sub2]/Si structures; Difference in thermal expansion between CoSi[sub2] and silicon; Significance of the Si/CoSi[sub2] system.
Databáze: Complementary Index