| Autor: |
Gal, M., Taylor, P. C., Usher, B. F., Orders, P. J. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 11/1/1987, Vol. 62 Issue 9, p3898, 4p, 1 Chart, 5 Graphs |
| Abstrakt: |
Examines photoluminescence in strained InGaAs-gallium arsenide single heterostructures grown by molecular beam epitaxy. Determination of the critical layer thickness for a range of indium mole fractions; Photoluminescence line shapes for layer thicknesses below and above the critical thickness; Shift of photoluminescence peak energy as a function of layer thickness. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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