Effect of interface structure on photoluminescence of InGaAs/GaAs pseudomorphic single quantum wells.

Autor: Devine, R. L. S., Moore, W. T.
Předmět:
Zdroj: Journal of Applied Physics; 11/1/1987, Vol. 62 Issue 9, p3999, 3p, 3 Graphs
Abstrakt: Reports on the effect of interface structure on photoluminescence of InGaAs/gallium arsenide pseudomorphic single quantum wells. Significance of photoluminescence in the investigation of the interface quality of quantum well structures; Problem of asymmetric interfaces; Effect of excitation intensity on the photoluminescence spectrum of a single quantum well.
Databáze: Complementary Index