| Autor: |
Moragues, J. M., Oualid, J., Jerisian, R., Ciantar, E. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 10/15/1993, Vol. 74 Issue 8, p5078, 8p |
| Abstrakt: |
Presents a study that examined electron injection at high field and moderate fluence into the gate oxide of metal-oxide-semiconductor transistors. Discussion on the application of electrical stresses to a metal-oxide-semiconductor field-effect transistor; Information on electron injection and electron trapping in silicon-oxide; Equations used in the study. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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