| Autor: |
Fung, C. D., Avila, R. E. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 10/15/1985, Vol. 58 Issue 8, p3039, 5p, 1 Diagram, 3 Graphs |
| Abstrakt: |
Deals with the development of a method to calculate the depth distribution of recoil atoms that result from ion implantation onto a substrate covered with thin surface layer. Projectile range distributions at intermediate energies; Calculation of the recoil implantation profile; Description of calculated recoil profiles. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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