| Autor: |
Huang, Qisheng, Grimmeiss, H. G., Samuelson, L. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 10/15/1985, Vol. 58 Issue 8, p3068, 4p, 6 Graphs |
| Abstrakt: |
Investigates the electronic properties of the defect E[sub4] generated in GaP by 1-MeV electron irradiation. Features of recombination-enhanced defects reactions and athermal annealing phenomena; Types of junction-space-charge techniques that were used to study the electronic properties of the defect; Method used in studying the photoionization cross sections. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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