| Autor: |
Mansour, Nabil S., Diff, Karim, Brennan, Kevin F. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 5/1/1991, Vol. 69 Issue 9, p6506, 4p, 5 Graphs |
| Abstrakt: |
Presents a study that compared different formulations of the electron-plasmon scattering rate and the dispersion relation on bulk semiconductor transport properties of degenerate gallium arsenide. Description of the model; Expression for the electron-plasmon emission rate using the electron-electron model; Choices of dispersion relations considered in the study. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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