| Autor: |
Fitzgerald, E. A., Ashizawa, Y., Eastman, L. F., Ast, D. G. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 5/15/1988, Vol. 63 Issue 10, p4925, 4p, 4 Black and White Photographs |
| Abstrakt: |
Focuses on a study which investigated the correlation between the structure of and the nonradiative recombination at defects in AlGaAs/InGaAs/GaAs heterostructures. Experimental method for detecting the critical layer thickness in the InGaAs/GaAs system; Results; Conclusion. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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