Secondary ion mass spectrometry study of the thermal stability of Cu/refractory metal/Si structures.

Autor:	Lane, L. C., Nason, T. C., Yang, G.-R., Lu, T.-M., Bakhru, H.
Předmět:	COPPER DIFFUSION SILICA TANTALUM CHROMIUM
Zdroj:	Journal of Applied Physics; 5/1/1991, Vol. 69 Issue 9, p6719, 3p, 5 Graphs
Abstrakt:	Presents a study that presented evidence for the blocking of copper diffusion into silicon dioxide and silicon by tantalum (Ta) and Ta/tungsten barriers. Capacity of a chromium layer as thin as 200 A; Versatility of secondary ion mass spectrometry; Requirement for metallization.
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu