| Autor: |
Mahan, A. H., Carapella, J., Nelson, B. P., Crandall, R. S., Balberg, I. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 5/1/1991, Vol. 69 Issue 9, p6728, 3p, 4 Graphs |
| Abstrakt: |
Deals with a study that discussed the deposition of device-quality hydrogenated amorphous silicon observed in device-quality glow discharge films by thermal decomposition of silane. Capacity of bonded hydrogen concentrations; Reason for the need of a sizeable fraction of hydrogen; Capability of an alternative deposition method. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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