| Autor: |
Ghandhi, S. K., Bhat, I. B., Taskar, N. R. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 3/15/1986, Vol. 59 Issue 6, p2253, 3p, 1 Black and White Photograph, 3 Graphs |
| Abstrakt: |
Describes the growth of epitaxial mercury cadmium telluride (MCT) on gallium arsenide (GaAs) substrates by organometallic vapor-phase epitaxy. Morphology of MCT layer grown on GaAs; Hall and resistivity measurements; Effect of the buffer layer thickness on the properties of the MCT layers. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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