| Autor: |
Belenky, G. L., Garbinski, P. A., Luryi, S., Mastrapasqua, M., Cho, A. Y., Hamm, R. A., Hayes, T. R., Laskowski, E. J., Sivco, D. L., Smith, P. R. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 6/15/1993, Vol. 73 Issue 12, p8618, 10p, 2 Diagrams, 11 Graphs |
| Abstrakt: |
Focuses on the realization of collector-up light-emitting complementary charge injection transistors (CHINT) in molecular-beam-epitaxy-grown n-InGaAs/InAlAs/p-InGaAs and n-InGaAs/InP/p-InGaAs heterostructures. Information on CHINT; Factors that affect the frequency performance of CHINT; Potential functions of light-emitting CHINT; Characteristic of the light-emitting CHINT. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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