| Autor: |
Larsson, K., Grimmeiss, H. G. |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 5/1/1988, Vol. 63 Issue 9, p4524, 6p, 6 Graphs |
| Abstrakt: |
Presents a study which investigated the effect of strong electric fields on some excited states of the substitutional selenium donor in silicon with the aid of a method for determining Fourier transform photoresponse spectra of impurity centers in the depletion of diodes. Details on thermal emission under the influence of an electric field; Way to obtain the energy shifts of bound due to external field; Principles of the experimental method; Experimental results. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
