| Autor: |
Verhoef, Leendert A., Zondervan, Albert, Lindholm, Fredrik A., Spitzer, Mark B., Keavney, Christopher J. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 5/1/1988, Vol. 63 Issue 9, p4683, 5p |
| Abstrakt: |
Presents information on a study which measured a low effective back-surface recombination velocity on boron-implanted back-surface field silicon solar cells. Mechanisms which cause the observation of a larger S in the thin ion-implanted cells than in the thick ion-implanted cells; Description of the solar cell fabrication; Characterization of the cells; Discussion on the possible origin for the low surface recombination velocity observed on the thick cells. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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