| Autor: |
Pion, Martin, Specht, Alisa, Appelman, Howard, Ebersohl, Richard, Begley, David, Waters, Robert, Guido, Thomas, Stazak, Susan |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 1/15/1988, Vol. 63 Issue 2, p588, 3p |
| Abstrakt: |
Investigates the low-threshold operation of interrupted-growth gallium arsenide step-index separate confinement heterostructure lasers grown on misoriented substrates by molecular-beam epitaxy. Molecular-beam-epitaxy system used in the study; Devices used for material threshold current density evaluation. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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