Determination of valence and conduction-band discontinuities at the (Ga,In) P/GaAs heterojunction by C-V profiling.

Autor: Rao, M. A., Caine, E. J., Kroemer, H., Long, S. I., Babic, D. I.
Předmět:
Zdroj: Journal of Applied Physics; 1/15/1987, Vol. 61 Issue 2, p643, 7p, 2 Diagrams, 6 Graphs
Abstrakt: Presents a study that determined the valence and conduction band discontinuities for the lattice matched (gallium, indium) phosphorus/gallium arsenide heterojunction using capacitance-voltage profiling. Methodology; Factors to consider in the measurement of the valence-band and conduction-band discontinuities; Information on the possible sources of errors in the study.
Databáze: Complementary Index