| Autor: |
Golanski, A., Pfister, J. C., Nicolle, T. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2/15/1986, Vol. 59 Issue 4, p1096, 7p, 2 Charts, 4 Graphs |
| Abstrakt: |
Presents information on a study which examined the isochronal and isothermal irreversible annealing of E[sup']sub1] defects induced in amorphous silicon dioxide by implantation of helium[sup+], nitrogen[sup+], oxygen[sup+] and bismuth[sup+] ions using electron paramagnetic resonance. Experimental details; Results and discussion; Conclusions. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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