Annealing effect for heavily Sn-implanted GaAs.
| Autor: | Shim, Tae Earn, Itoh, Tadatsugu, Yamamoto, Yasuhiro |
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| Předmět: | |
| Zdroj: | Journal of Applied Physics; 5/1/1987, Vol. 61 Issue 9, p4635, 5p, 4 Black and White Photographs, 4 Graphs |
| Abstrakt: | Analyzes lattice site location, residual defects and activation behavior of tin-implanted gallium arsenide. Details on the experiment; Results of the study; Conclusion. |
| Databáze: | Complementary Index |
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