Photoluminescence from heavily doped Si layers grown by liquid-phase epitaxy.

Autor: Wagner, J., Appel, W., Warth, M.
Předmět:
Zdroj: Journal of Applied Physics; 2/15/1986, Vol. 59 Issue 4, p1305, 4p, 3 Graphs
Abstrakt: Presents information on a study which examined the phosphorous- and gallium-doped silicon grown by liquid-phase epitaxy using photoluminescence. Experimental details; Results and discussion; Conclusions.
Databáze: Complementary Index