Photoluminescence from heavily doped Si layers grown by liquid-phase epitaxy.
Autor: | Wagner, J., Appel, W., Warth, M. |
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Předmět: | |
Zdroj: | Journal of Applied Physics; 2/15/1986, Vol. 59 Issue 4, p1305, 4p, 3 Graphs |
Abstrakt: | Presents information on a study which examined the phosphorous- and gallium-doped silicon grown by liquid-phase epitaxy using photoluminescence. Experimental details; Results and discussion; Conclusions. |
Databáze: | Complementary Index |
Externí odkaz: |