Fe-doped semi-insulating InP grown by chloride vapor-phase epitaxy.

Autor: Tanaka, K., Nakai, K., Aoki, O., Sugawara, M., Wakao, K., Yamakoshi, S.
Předmět:
Zdroj: Journal of Applied Physics; 5/1/1987, Vol. 61 Issue 9, p4698, 3p, 1 Diagram, 1 Graph
Abstrakt: Investigates the iron doping by chloride vapor-phase epitaxy (VPE) to obtain semi-insulating (SI) InP layers. Resistivity of the SI-InP layer; Schematic configuration of the chloride VPE apparatus for the iron doping; Procedure of iron doping.
Databáze: Complementary Index