Fe-doped semi-insulating InP grown by chloride vapor-phase epitaxy.
Autor: | Tanaka, K., Nakai, K., Aoki, O., Sugawara, M., Wakao, K., Yamakoshi, S. |
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Zdroj: | Journal of Applied Physics; 5/1/1987, Vol. 61 Issue 9, p4698, 3p, 1 Diagram, 1 Graph |
Abstrakt: | Investigates the iron doping by chloride vapor-phase epitaxy (VPE) to obtain semi-insulating (SI) InP layers. Resistivity of the SI-InP layer; Schematic configuration of the chloride VPE apparatus for the iron doping; Procedure of iron doping. |
Databáze: | Complementary Index |
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