Molecular-beam epitaxy of Si on a CaF2/Si (100) structure.
Autor: | Sasaki, Masayoshi, Onoda, Hiroshi |
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Předmět: | |
Zdroj: | Journal of Applied Physics; 5/1/1986, Vol. 59 Issue 9, p3104, 6p, 3 Black and White Photographs, 5 Charts |
Abstrakt: | Discusses a study which investigated the heteroepitaxial growth of silicon on a calcium fluoride/silicon structure by molecular-beam epitaxy. Applications of calcium fluoride film; Crystalline quality of epitaxial silicon; Behavior of predeposited silicon layer. |
Databáze: | Complementary Index |
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