Molecular-beam epitaxy of Si on a CaF2/Si (100) structure.

Autor: Sasaki, Masayoshi, Onoda, Hiroshi
Předmět:
Zdroj: Journal of Applied Physics; 5/1/1986, Vol. 59 Issue 9, p3104, 6p, 3 Black and White Photographs, 5 Charts
Abstrakt: Discusses a study which investigated the heteroepitaxial growth of silicon on a calcium fluoride/silicon structure by molecular-beam epitaxy. Applications of calcium fluoride film; Crystalline quality of epitaxial silicon; Behavior of predeposited silicon layer.
Databáze: Complementary Index