Effect of a-SiNx:H composition on band bending near the interface of a-Si:H/a-SiNx:H layered structures.
| Autor: | Hiranaka, Kouichi, Yoshimura, Tetsuzo, Yamaguchi, Tadahisa, Yanagisawa, Shintaro |
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| Zdroj: | Journal of Applied Physics; 12/15/1986, Vol. 60 Issue 12, p4204, 5p, 7 Graphs |
| Abstrakt: | Presents a study which investigated the effect of band bending near the interface of hydrogenated amorphous silicon/hydrogenated amorphous SiN[subx] layered structures. Experimental details; Results and discussion; Conclusion. |
| Databáze: | Complementary Index |
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